Energy Band Diagram of FTO/porous Silicon Heterostructure

Energy band diagram of device-grade silicon nanocrystals.

Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, ...

Silicon-based silicon-germanium-tin heterostructure photonics.

The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifi...

Wavelet Method for Computing Energy Band Diagram of Semiconductors

A wavelet expansion is applied for solving Schrödinger equation in order to compute band structure of an electronic crystal. In this paper we have used this method for finding band structure of one dimensional arbitrary potential. As discussed here, this algorithm could be easily applied to twoor three-dimensional arbitrary potentials. This paper is emphasizing on revealing the mathematical asp...

Supporting Information Energy Band Structure of Device-Grade Silicon Nanocrystals

A Silicon-Polymer Heterostructure for Sensor Applications

We report the development and characterization of high quality polyaniline-silicon heterojunction diodes appropriated for use as gas and/or ionizing radiation sensors. Polyaniline thin lms 40 nm thick are an active part of the junction structure, that presents excellent electrical characteristics, with rectifying ratio of 50,000 at 1.0 Volt bias. The devices are very sensitive to -radiation up ...